"Controlled THz generation by plasmonic nonlinear metasurfaces"
The International Si Technology and Device Meeting (ISTDM) / International Conference on Silicon Epitaxy and Heterostructures (ICSI) provides a unique forum for reviewing and discussing novel developments in physics and device technologies of Si epitaxy, heterostructures, and nanostructures and its implementation in novel device concepts.
The venue of this biannual conference is rotated between Asia, Europe, and America. ICSI started in 1999 and ISTDM in 2003.
In 2018 , ISTDM and ICSI were merged, offering a joint platform to discuss state-of-the-art research and development activities in the area of SiGe materials science and technology.
More info at: www.istdm-icsi-2023.polimi.it
The deadline for abstract submission is January 14, 2023.