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Dipartimento di Fisica - Politecnico di Milano

[18/03/2021 - 14:00]

Giuglio Franchini (PhD Candidate in Information Technology - Electronics at Politecnico di Milano)

"Numerical modeling of current transport and polarization switching in Ferroelectric Tunnel Junctions with semiconductor electrodes"

 

gio 18/03/2021 - 14:00 - Online (link)

 

Abstract:

Ferroelectric Tunnel Junctions (FTJ) with semiconductor electrodes are today widely explored for their possible application as memory elements in high-density memory arrays and as synaptic devices in hardware artificial neural networks. In the attempt to optimize their operation in terms of resistive memory window and switching speed, the development of physics-based numerical models able to guide device design is essential. In this seminar, a 1D model able to reproduce the current-voltage characteristics of FTJ with a semiconductor electrode will be presented and validated against experimental data collected on Pt/BTO/Nb:STO FTJ after set/reset operations. The switching dynamics of the devices will also be addressed, showing some preliminary results obtained from a 2D model coupling polarization switching with current transport.

 

"Numerical modeling of current transport and polarization switching in Ferroelectric Tunnel Junctions with semiconductor electrodes"

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