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Giovanni Isella

I graduated in Nuclear Engineering at the Politecnico di Milano, Italy in 1997 and I hold a Ph.D. in Physics
from the same institution (2000). Since then, I have been active in the deposition and characterization of
silicon-germanium heterostructures.
Since 2007 I am leading the SiGe epitaxy team at the laboratory for nanostructures epitaxy and
spintronics on silicon (LNESS-Politecnico di Milano). My current interests include: spin dynamics in Ge
quantum wells, infrared light detection and modulation in SiGe heterostructures, Ge deposition on
patterned substrates, integration of III-V semiconductors on Ge/Si. I am co-author of more than 240
publications on international journals (h-index=24).


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