I graduated in Nuclear Engineering at the Politecnico di Milano in 1997 and I hold a Ph.D. in Physics from the same institution.

Since 2001 my research interests are focused on the epitaxial growth and applications of silicon-germanium (SiGe) heterostructures and devices. Over almost 20 years of activity, I had the chance to explore the wealth of possibilities offered by strain and bandgap engineering in SiGe heterostructures in a variety of application fields including: quantum transport in Ge quantum wells (QW), near- and mid-infrared integrated optics in SiGe waveguides and MQW modulators, thermoelectric generation in low‑dimensional semiconductors, spintronics in Ge heterostructures, epitaxial growth on patterned substrates, plasmonic effects in heavily doped Ge and the development of qubits based on hole states in Ge.